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APTGT200A60TG
Phase leg Trench + Field Stop IGBT(R) Power Module
VBUS NT C2
VCES = 600V IC = 200A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 600 290 200 400 20 625 400A @ 550V Unit V A
June, 2006 1-6 APTGT200A60TG - Rev 1
Q1 G1
E1 OUT Q2 G2
E2
0/VBU S
NT C1
G2 E2
OUT
VBUS
0/VBUS
OUT
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C
V W
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT200A60TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 200A Tj = 150C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A R G = 2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 200A R G = 2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 200A Tj = 25C R G = 2 Tj = 150C
Min
Typ 12.3 0.8 0.4 115 45 225 55 130 50 300 70 1 1.8 5.7 7
Max
Unit nF
ns
ns
mJ mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=600V IF = 200A VGE = 0V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
di/dt =2200A/s
mJ
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APTGT200A60TG - Rev 1
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IF = 200A VR = 300V
200 1.6 1.5 130 225 9 19 2.3 4.7
2
V ns C
APTGT200A60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.24 0.4 175 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500 -40 -40 -40 2.5
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGT200A60TG
Typical Performance Curve
Output Characteristics (VGE =15V) Output Characteristics 400 350 300 IC (A)
TJ=150C T J = 150C VGE=19V
400 350 300
IC (A)
T J=25C TJ=125C
250 200 150 100 50 0 0 0.5 1
T J=25C
250 200 150 100 50 0
VGE =13V VGE=15V
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 V CE (V)
2.5
3
3.5
400 350 300
Transfert Characteristics 14
T J=25C
Energy losses vs Collector Current 12 10 E (mJ) 8 6 4
VCE = 300V VGE = 15V RG = 2 TJ = 150C Eoff
250 IC (A) 200 150 100 50 0 5 6 7 8
TJ=125C TJ=150C T J=25C
Er
2 0 11 12 0 50
Eon
9
10
100 150 200 250 300 350 400 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 16
VCE = 300V VGE =15V IC = 200A T J = 150C
Reverse Bias Safe Operating Area 500 400
12 E (mJ)
Eoff Eon
8
IF (A)
300 200
4
Eon
Er
100 0
VGE =15V T J=150C RG=2
0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14
0
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1
IGBT
0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
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APTGT200A60TG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 50 100 150 IC (A) 200 250
Hard switching ZCS ZVS VCE=300V D=50% RG=2 TJ =150C
Forward Characteristic of diode 400 350 300 250 IC (A) 200 150 100 50 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4
TJ =125C T J=150C
Tc=85C
TJ =25C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.9
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGT200A60TG
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